Phase Engineering of 2D Tin Sulfides

Tin sulfides can exist in a variety of phases and polytypes due to the different oxidation states of Sn. A subset of these phases and polytypes take the form of layered 2D structures that give rise to a wide host of electronic and optical properties. Hence, achieving control over the phase, polytype...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2016-06, Vol.12 (22), p.2998-3004
Hauptverfasser: Mutlu, Zafer, Wu, Ryan J., Wickramaratne, Darshana, Shahrezaei, Sina, Liu, Chueh, Temiz, Selcuk, Patalano, Andrew, Ozkan, Mihrimah, Lake, Roger K., Mkhoyan, K. A., Ozkan, Cengiz S.
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Sprache:eng
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Zusammenfassung:Tin sulfides can exist in a variety of phases and polytypes due to the different oxidation states of Sn. A subset of these phases and polytypes take the form of layered 2D structures that give rise to a wide host of electronic and optical properties. Hence, achieving control over the phase, polytype, and thickness of tin sulfides is necessary to utilize this wide range of properties exhibited by the compound. This study reports on phase‐selective growth of both hexagonal tin (IV) sulfide SnS2 and orthorhombic tin (II) sulfide SnS crystals with diameters of over tens of microns on SiO2 substrates through atmospheric pressure vapor‐phase method in a conventional horizontal quartz tube furnace with SnO2 and S powders as the source materials. Detailed characterization of each phase of tin sulfide crystals is performed using various microscopy and spectroscopy methods, and the results are corroborated by ab initio density functional theory calculations. Phase‐selective growth of 2D tin sulfides (SnS2 and SnS) is demonstrated. Highly crystalline hexagonal SnS2 and orthorhombic SnS crystals are synthesized on SiO2 substrates by atmospheric pressure vapor‐phase method using SnO2 and S as the source materials. The structural, vibrational, and electronic properties of each phase are studied by both experimental characterizations and ab initio density functional theory calculations.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201600559