Radiation-hardening methodologies for flash ADC

Radiation-hardening methodologies for flash ADC

This work presents a rad-hard 4-bit 10 MHz Flash ADC for space applications. The converter has been developed using rad-hardened techniques at architecture, circuit and layout levels. The design takes into account the different effects of the radiation that could damage the circuits in harsh environ...

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Veröffentlicht in:Analog integrated circuits and signal processing 2016-05, Vol.87 (2), p.141-154
Hauptverfasser: Gatti, Umberto, Calligaro, Cristiano, Pikhay, Evgeny, Roizin, Yakov
Format: Artikel
Sprache:eng
Schlagworte:
Circuits
Circuits and Systems
CMOS
Damage
Electrical Engineering
Engineering
Immunity
Integrated circuits
Signal processing
Signal,Image and Speech Processing
Silicon
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Beschreibung
Zusammenfassung:This work presents a rad-hard 4-bit 10 MHz Flash ADC for space applications. The converter has been developed using rad-hardened techniques at architecture, circuit and layout levels. The design takes into account the different effects of the radiation that could damage the circuits in harsh environments. The ADC has been integrated in a standard CMOS 0.18-μm technology by TowerJazz. The prototype has been tested with a custom methodology and showed a Total Dose immunity up to 300 krad (Si).
ISSN:0925-1030
1573-1979
DOI:10.1007/s10470-015-0627-7