Effect of treatment temperature on surface wettability of methylcyclosiloxane layer formed by chemical vapor deposition

[Display omitted] The surface wettability of the native Si oxide surfaces were tuned by chemical adsorption of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) molecules through thermal CVD method at different temperature. Water contact angle measurements revealed that the water contact angles of the T...

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Veröffentlicht in:Applied surface science 2016-08, Vol.379, p.446-451
Hauptverfasser: Ishizaki, Takahiro, Sasagawa, Keisuke, Furukawa, Takuya, Kumagai, Sou, Yamamoto, Erina, Chiba, Satoshi, Kamiyama, Naosumi, Kiguchi, Takayoshi
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Sprache:eng
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Zusammenfassung:[Display omitted] The surface wettability of the native Si oxide surfaces were tuned by chemical adsorption of 1,3,5,7-tetramethylcyclotetrasiloxane (TMCTS) molecules through thermal CVD method at different temperature. Water contact angle measurements revealed that the water contact angles of the TMCTS-modified Si oxide surfaces at the temperature of 333–373K were found to be in the range of 92±2–102±2°. The advancing and receding water contact angle of the surface prepared at 333K were found to be 97±2/92±2°, showing low contact angle hysteresis surface. The water contact angles of the surfaces prepared at the temperature of 373–413K increased with an increase in the treatment temperature. When the treatment temperature was more than 423K, the water contact angles of TMCTS-modified surfaces were found to become more than 150°, showing superhydrophobic surface. AFM study revealed that the surface roughness of the TMCTS-modified surface increased with an increase in the treatment temperature. This geometric morphology enhanced the surface hydrophobicity. The surface roughness could be fabricated due to the hydrolysis/condensation reactions in the gas phase during CVD process. The effect of the treatment temperature on the reactivity of the TMCTS molecules were also investigated using a thermogravimetric analyzer.
ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2016.03.149