CZTS absorber layer for thin film solar cells from electrodeposited metallic stacked precursors (Zn/Cu-Sn)
[Display omitted] •CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn).•Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also.•Two different excitation wavelengths of laser lines (...
Gespeichert in:
Veröffentlicht in: | Applied surface science 2016-08, Vol.379, p.91-97 |
---|---|
Hauptverfasser: | , , , , , |
Format: | Artikel |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | [Display omitted]
•CZTS absorber layer was fabricated by electrodeposition—annealing route from stacked bilayer precursor (Zn/Cu-Sn).•Different characterization techniques have ensured the well formed Kesterite CZTS along the film thickness also.•Two different excitation wavelengths of laser lines (514.5 and 785nm) have been used for the Raman characterization of the films.•No significant Sn loss is observed in CZTS films after the sulfurization of the stacked bilayer precursors.•Photoluminescence spectroscopy reveals the PL peak of CZTS at 1.15eV at low temperature (15K).
In the present work, Kesterite-Cu2ZnSnS4 (CZTS) thin films were successfully synthesized from stacked bilayer precursor (Zn/Cu-Sn) through electrodeposition-annealing route. Adherent and homogeneous Cu-poor, Zn-rich stacked metal Cu-Zn-Sn precursors with different compositions were sequentially electrodeposited, in the order of Zn/Cu-Sn onto Mo foil substrates. Subsequently, stacked layers were soft annealed at 350°C for 20min in flowing N2 atmosphere in order to improve intermixing of the elements. Then, sulfurization was completed at 585°C for 15min in elemental sulfur environment in a quartz tube furnace with N2 atmosphere. Morphological, compositional and structural properties of the films were investigated using SEM, EDS and XRD methods. Raman spectroscopy with two different excitation lines (514.5 and 785nm), has been carried out on the sulfurized films in order to fully characterize the CZTS phase. Higher excitation wavelength showed more secondary phases, but with low intensities. Glow discharge optical emission spectroscopy (GDOES) has also been performed on films showing well formed Kesterite CZTS along the film thickness as compositions of the elements do not change along the thickness. In order to investigate the electronic structure of the CZTS, Photoluminescence (PL) spectroscopy has been carried out on the films, whose results matched up with the literatures. |
---|---|
ISSN: | 0169-4332 1873-5584 |
DOI: | 10.1016/j.apsusc.2016.04.062 |