Eu-doped ZnO-HfO sub(2) hybrid nanocrystal-embedded low-loss glass-ceramic waveguides

We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO sub(2) -&$(30-x)$; HfO sub(2)-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the co...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Nanotechnology 2016-03, Vol.27 (10), p.105202-105210
Hauptverfasser: Ghosh, Subhabrata, Bhaktha B N, Shivakiran
Format: Artikel
Sprache:eng
Schlagworte:
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:We report on the sol-gel fabrication, using a dip-coating technique, of low-loss Eu-doped 70SiO sub(2) -&$(30-x)$; HfO sub(2)-xZnO (x = 2, 5, 7 and 10 mol%) ternary glass-ceramic planar waveguides. Transmission electron microscopy and grazing incident x-ray diffraction experiments confirm the controlled growth of hybrid nanocrystals with an average size of 3 nm-25 nm, composed of ZnO encapsulated by a thin layer of nanocrystalline HfO sub(2), with an increase of ZnO concentration from x = 2 mol% to 10 mol% in the SiO sub(2)-HfO sub(2) composite matrix. The effect of crystallization on the local environment of Eu ions, doped in the ZnO-HfO sub(2) hybrid nanocrystal-embedded glass-ceramic matrix, is studied using photoluminescence spectra, wherein an intense mixed-valence state (divalent as well as trivalent) emission of Eu ions is observed. The existence of Eu super(2+) and Eu super(3+) in the SiO sub(2)-HfO sub(2)-ZnO ternary matrix is confirmed by x-ray photoelectron spectroscopy. Importantly, the Eu&2+,3+}$; -doped ternary waveguides exhibit low propagation losses (0.3 plus or minus 0.2 dB cm super(-1) at 632.8 nm) and optical transparency in the visible region of the electromagnetic spectrum, which makes ZnO-HfO sub(2) nanocrystal-embedded SiO sub(2)-HfO sub(2)-ZnO waveguides a viable candidate for the development of on-chip, active, integrated optical devices.
ISSN:0957-4484
1361-6528
DOI:10.1088/0957-4484/27/10/105202