A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10

A Review on InGaSb Growth under Microgravity and Terrestrial Conditions Towards Future Crystal Growth Project Using Chinese Recovery Satellite SJ-10

The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Microgravity science and technology 2016-05, Vol.28 (2), p.143-154
Hauptverfasser: Yu, Jianding, Liu, Yan, Pan, Xiuhong, Zhao, Hongyang, Kumar, Velu Nirmal, Arivanandhan, Mukannan, Momose, Yoshimi, Hayakawa, Yasuhiro, Zhang, Xingwang, Luo, Xinghong, Okano, Yasuhiro, Inatomi, Yuko
Format: Artikel
Sprache:eng
Schlagworte:
Aerospace Technology and Astronautics
Classical and Continuum Physics
Composition effects
Crystal growth
Crystals
Engineering
Freezing
Gravitation
Gravity effects
Indium
Liquids
Microgravity
Original Article
Recovery
Satellites
Space Exploration and Astronautics
Space Sciences (including Extraterrestrial Physics
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The paper reviewed the previous microgravity experiment using Chinese recovery satellite, the in-situ measurement of composition profile in the solution by X-ray penetration method and homogeneous growth of InGaSb by temperature freezing method under terrestrial condition for making clear the effect of gravity on the growth of InGaSb ternary alloy semiconductor crystals. The previous experimental results showed that the shape of solid/liquid interfaces and composition profile in the solution were significantly affected by gravity. Based on the previous microgravity experimental results, experimental conditions were investigated to grow homogeneous In x Ga 1−x Sb with higher indium composition at Chinese recovery satellite SJ-10 in near future.
ISSN:0938-0108
1875-0494
DOI:10.1007/s12217-016-9493-x