76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels
We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance....
Gespeichert in:
| Veröffentlicht in: | SID International Symposium Digest of technical papers 2016-05, Vol.47 (1), p.1037-1040 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 1040 |
|---|---|
| container_issue | 1 |
| container_start_page | 1037 |
| container_title | SID International Symposium Digest of technical papers |
| container_volume | 47 |
| creator | Shima, Yukinori Jincho, Masami Hamochi, Takashi Saito, Satoru Dobashi, Masayoshi Okazaki, Kenichi Koezuka, Junichi Matsuda, Shinpei Tsubuku, Masashi Yamazaki, Shunpei |
| description | We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance. |
| doi_str_mv | 10.1002/sdtp.10920 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1825453106</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>4067190631</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2170-f85e1b259ff8664afe4ff915db464f899f92fa2922648bdf7142b899b4753d283</originalsourceid><addsrcrecordid>eNp9kctu1DAYhSMEEkNhwxNYYoOQTG3HcWJ2o7RMW41oacNFbCxnYs-4eOxgO3TmTXhcXAZYsGD1X_SdoyOdoniO0WuMEDmOQxrzxgl6UMwIZg1EuOIPixlCvIacsc-Piycx3iJUlpTyWfGjZrB8A07Ud2X9uFUuAa-BBJ0f4UImBbogXTQx-QDuTNqAm40PCbQb6ZyyYKncOj-lG0AL5zsT4dyatVP5DPuYpLXGKXDuBjNts18-8_xi3Ape7syggM62Z2a9gdcqejsl4x24ktk5Pi0eaWmjevZ7HhUf3p527RlcXi7O2_kSrgiuEdRNpXBPKq51wxiVWlGtOa6GnjKqG841J1oSTgijTT_oGlPS53dP66ocSFMeFS8PvmPw3yYVk9iauFLW5hR-igI3pKJViRHL6It_0Fs_BZfTCVxzjCklqM7UqwO1Cj7GoLQYg9nKsBcYifuSxH1J4ldJGcYH-M5Ytf8PKW5Ouqs_GnjQ5FbU7q9Ghq-C1WVdiU_vFuJjd9Fcvyet6MqfKwejdg</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1791144207</pqid></control><display><type>article</type><title>76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels</title><source>Wiley Journals</source><creator>Shima, Yukinori ; Jincho, Masami ; Hamochi, Takashi ; Saito, Satoru ; Dobashi, Masayoshi ; Okazaki, Kenichi ; Koezuka, Junichi ; Matsuda, Shinpei ; Tsubuku, Masashi ; Yamazaki, Shunpei</creator><creatorcontrib>Shima, Yukinori ; Jincho, Masami ; Hamochi, Takashi ; Saito, Satoru ; Dobashi, Masayoshi ; Okazaki, Kenichi ; Koezuka, Junichi ; Matsuda, Shinpei ; Tsubuku, Masashi ; Yamazaki, Shunpei</creatorcontrib><description>We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.</description><identifier>ISSN: 0097-966X</identifier><identifier>EISSN: 2168-0159</identifier><identifier>DOI: 10.1002/sdtp.10920</identifier><language>eng</language><publisher>Campbell: Blackwell Publishing Ltd</publisher><subject>CAAC-OS ; Channels ; Crystal structure ; Field effect transistors ; Gates ; high resolution panel ; LTPS ; Optimization ; oxide semiconductor ; Oxides ; Semiconductor devices ; Semiconductors ; TGSA ; Zinc</subject><ispartof>SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.1037-1040</ispartof><rights>2016 Society for Information Display</rights><rights>2016 The Society for Information Display</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2170-f85e1b259ff8664afe4ff915db464f899f92fa2922648bdf7142b899b4753d283</citedby><cites>FETCH-LOGICAL-c2170-f85e1b259ff8664afe4ff915db464f899f92fa2922648bdf7142b899b4753d283</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsdtp.10920$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsdtp.10920$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids></links><search><creatorcontrib>Shima, Yukinori</creatorcontrib><creatorcontrib>Jincho, Masami</creatorcontrib><creatorcontrib>Hamochi, Takashi</creatorcontrib><creatorcontrib>Saito, Satoru</creatorcontrib><creatorcontrib>Dobashi, Masayoshi</creatorcontrib><creatorcontrib>Okazaki, Kenichi</creatorcontrib><creatorcontrib>Koezuka, Junichi</creatorcontrib><creatorcontrib>Matsuda, Shinpei</creatorcontrib><creatorcontrib>Tsubuku, Masashi</creatorcontrib><creatorcontrib>Yamazaki, Shunpei</creatorcontrib><title>76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels</title><title>SID International Symposium Digest of technical papers</title><description>We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.</description><subject>CAAC-OS</subject><subject>Channels</subject><subject>Crystal structure</subject><subject>Field effect transistors</subject><subject>Gates</subject><subject>high resolution panel</subject><subject>LTPS</subject><subject>Optimization</subject><subject>oxide semiconductor</subject><subject>Oxides</subject><subject>Semiconductor devices</subject><subject>Semiconductors</subject><subject>TGSA</subject><subject>Zinc</subject><issn>0097-966X</issn><issn>2168-0159</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kctu1DAYhSMEEkNhwxNYYoOQTG3HcWJ2o7RMW41oacNFbCxnYs-4eOxgO3TmTXhcXAZYsGD1X_SdoyOdoniO0WuMEDmOQxrzxgl6UMwIZg1EuOIPixlCvIacsc-Piycx3iJUlpTyWfGjZrB8A07Ud2X9uFUuAa-BBJ0f4UImBbogXTQx-QDuTNqAm40PCbQb6ZyyYKncOj-lG0AL5zsT4dyatVP5DPuYpLXGKXDuBjNts18-8_xi3Ape7syggM62Z2a9gdcqejsl4x24ktk5Pi0eaWmjevZ7HhUf3p527RlcXi7O2_kSrgiuEdRNpXBPKq51wxiVWlGtOa6GnjKqG841J1oSTgijTT_oGlPS53dP66ocSFMeFS8PvmPw3yYVk9iauFLW5hR-igI3pKJViRHL6It_0Fs_BZfTCVxzjCklqM7UqwO1Cj7GoLQYg9nKsBcYifuSxH1J4ldJGcYH-M5Ytf8PKW5Ouqs_GnjQ5FbU7q9Ghq-C1WVdiU_vFuJjd9Fcvyet6MqfKwejdg</recordid><startdate>201605</startdate><enddate>201605</enddate><creator>Shima, Yukinori</creator><creator>Jincho, Masami</creator><creator>Hamochi, Takashi</creator><creator>Saito, Satoru</creator><creator>Dobashi, Masayoshi</creator><creator>Okazaki, Kenichi</creator><creator>Koezuka, Junichi</creator><creator>Matsuda, Shinpei</creator><creator>Tsubuku, Masashi</creator><creator>Yamazaki, Shunpei</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SC</scope><scope>7SP</scope><scope>8FD</scope><scope>JQ2</scope><scope>L7M</scope><scope>L~C</scope><scope>L~D</scope></search><sort><creationdate>201605</creationdate><title>76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels</title><author>Shima, Yukinori ; Jincho, Masami ; Hamochi, Takashi ; Saito, Satoru ; Dobashi, Masayoshi ; Okazaki, Kenichi ; Koezuka, Junichi ; Matsuda, Shinpei ; Tsubuku, Masashi ; Yamazaki, Shunpei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2170-f85e1b259ff8664afe4ff915db464f899f92fa2922648bdf7142b899b4753d283</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>CAAC-OS</topic><topic>Channels</topic><topic>Crystal structure</topic><topic>Field effect transistors</topic><topic>Gates</topic><topic>high resolution panel</topic><topic>LTPS</topic><topic>Optimization</topic><topic>oxide semiconductor</topic><topic>Oxides</topic><topic>Semiconductor devices</topic><topic>Semiconductors</topic><topic>TGSA</topic><topic>Zinc</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Shima, Yukinori</creatorcontrib><creatorcontrib>Jincho, Masami</creatorcontrib><creatorcontrib>Hamochi, Takashi</creatorcontrib><creatorcontrib>Saito, Satoru</creatorcontrib><creatorcontrib>Dobashi, Masayoshi</creatorcontrib><creatorcontrib>Okazaki, Kenichi</creatorcontrib><creatorcontrib>Koezuka, Junichi</creatorcontrib><creatorcontrib>Matsuda, Shinpei</creatorcontrib><creatorcontrib>Tsubuku, Masashi</creatorcontrib><creatorcontrib>Yamazaki, Shunpei</creatorcontrib><collection>Istex</collection><collection>CrossRef</collection><collection>Computer and Information Systems Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Computer and Information Systems Abstracts Academic</collection><collection>Computer and Information Systems Abstracts Professional</collection><jtitle>SID International Symposium Digest of technical papers</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Shima, Yukinori</au><au>Jincho, Masami</au><au>Hamochi, Takashi</au><au>Saito, Satoru</au><au>Dobashi, Masayoshi</au><au>Okazaki, Kenichi</au><au>Koezuka, Junichi</au><au>Matsuda, Shinpei</au><au>Tsubuku, Masashi</au><au>Yamazaki, Shunpei</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels</atitle><jtitle>SID International Symposium Digest of technical papers</jtitle><date>2016-05</date><risdate>2016</risdate><volume>47</volume><issue>1</issue><spage>1037</spage><epage>1040</epage><pages>1037-1040</pages><issn>0097-966X</issn><eissn>2168-0159</eissn><abstract>We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.</abstract><cop>Campbell</cop><pub>Blackwell Publishing Ltd</pub><doi>10.1002/sdtp.10920</doi><tpages>4</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0097-966X |
| ispartof | SID International Symposium Digest of technical papers, 2016-05, Vol.47 (1), p.1037-1040 |
| issn | 0097-966X 2168-0159 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1825453106 |
| source | Wiley Journals |
| subjects | CAAC-OS Channels Crystal structure Field effect transistors Gates high resolution panel LTPS Optimization oxide semiconductor Oxides Semiconductor devices Semiconductors TGSA Zinc |
| title | 76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T05%3A37%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=76-3:%20Development%20of%20a%20Top-Gate%20Transistor%20with%20Short%20Channel%20Length%20and%20C-Axis-Aligned%20Crystalline%20Indium-Gallium-Zinc-Oxide%20for%20High-Resolution%20Panels&rft.jtitle=SID%20International%20Symposium%20Digest%20of%20technical%20papers&rft.au=Shima,%20Yukinori&rft.date=2016-05&rft.volume=47&rft.issue=1&rft.spage=1037&rft.epage=1040&rft.pages=1037-1040&rft.issn=0097-966X&rft.eissn=2168-0159&rft_id=info:doi/10.1002/sdtp.10920&rft_dat=%3Cproquest_cross%3E4067190631%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1791144207&rft_id=info:pmid/&rfr_iscdi=true |