76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels

76-3: Development of a Top-Gate Transistor with Short Channel Length and C-Axis-Aligned Crystalline Indium-Gallium-Zinc-Oxide for High-Resolution Panels

We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance....

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Veröffentlicht in:SID International Symposium Digest of technical papers 2016-05, Vol.47 (1), p.1037-1040
Hauptverfasser: Shima, Yukinori, Jincho, Masami, Hamochi, Takashi, Saito, Satoru, Dobashi, Masayoshi, Okazaki, Kenichi, Koezuka, Junichi, Matsuda, Shinpei, Tsubuku, Masashi, Yamazaki, Shunpei
Format: Artikel
Sprache:eng
Schlagworte:
CAAC-OS
Channels
Crystal structure
Field effect transistors
Gates
high resolution panel
LTPS
Optimization
oxide semiconductor
Oxides
Semiconductor devices
Semiconductors
TGSA
Zinc
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Beschreibung
Zusammenfassung:We have fabricated top‐gate field‐effect transistors (FETs) based on an oxide semiconductor for high‐performance driving capability. The optimization of the plasma treatment enabled a 50‐nm‐thick gate insulating film and a short channel length of these FETs, enabling a high FET performance.
ISSN:0097-966X
2168-0159
DOI:10.1002/sdtp.10920