Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs

In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes (SBDs) are fabricated with three N-type drift layer thickness values of 10 μm, 30μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are...

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Veröffentlicht in:Chinese physics B 2016-04, Vol.25 (4), p.314-319
1. Verfasser: 宋庆文 汤晓燕 袁昊 王悦湖 张艺蒙 郭辉 贾仁需 吕红亮 张义门 张玉明
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Sprache:eng
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Zusammenfassung:In this paper, 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power Schottky barrier diodes (SBDs) are fabricated with three N-type drift layer thickness values of 10 μm, 30μm, and 50 μm, respectively. The avalanche breakdown capabilities, static and transient characteristics of the fabricated devices are measured in detail and compared with the theoretical pre- dictions. It is found that the experimental results match well with the theoretical calculation results and are very close to the 4H-SiC theoretical limit line. The best achieved breakdown voltages (BVs) of the diodes on the 10 p.m, 30 m, and 50 -tm epilayers are 1400 V, 3320 V, and 5200 V, respectively. Differential specific-on resistances (Ron-sp) are 2.1 m--cm2, 7.34 mO. cm2, and 30.3 m-. cm2, respectively.
ISSN:1674-1056
2058-3834
1741-4199
DOI:10.1088/1674-1056/25/4/047102