The effect of small pyramid texturing on the enhanced passivation and efficiency of single c-Si solar cells
In this work, a simple method to form small random pyramid texturing (0.5-2 μm size) is proposed to enhance the surface passivation of commercial p-type Cz-Si wafers. Small pyramid texturing was generated with chemical nano-masking for anisotropic etching. The surface recombination velocity obtained...
Gespeichert in:
| Veröffentlicht in: | RSC advances 2016-01, Vol.6 (55), p.49831-49838 |
|---|---|
| Hauptverfasser: | , , , , , , , , , |
| Format: | Artikel |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 49838 |
|---|---|
| container_issue | 55 |
| container_start_page | 49831 |
| container_title | RSC advances |
| container_volume | 6 |
| creator | Ju, Minkyu Balaji, Nagarajan Park, Cheolmin Thanh Nguyen, Huong Thi Cui, Jian Oh, Donghyun Jeon, Minhan Kang, Jiyoon Shim, Gyeongbae Yi, Junsin |
| description | In this work, a simple method to form small random pyramid texturing (0.5-2 μm size) is proposed to enhance the surface passivation of commercial p-type Cz-Si wafers. Small pyramid texturing was generated with chemical nano-masking for anisotropic etching. The surface recombination velocity obtained after the passivation of the thermal oxide layer reduced from 65 and 10 cm s
−1
for the large pyramids (10-15 μm size) and small pyramid (0.5-2 μm) texturing respectively. The solar cell fabricated with large pyramid texturing resulted in an efficiency of 17.82% with a current density (
J
SC
) of 36.91 mA cm
−2
, an open circuit voltage (
V
OC
) of 620 mV whereas small pyramid texturing resulted in an efficiency of 18.5% with
J
SC
of 37.6 mA cm
−2
and
V
OC
of 628 mV. The low surface recombination velocity increases the
V
OC
by 8 mV. The small pyramid textured wafers are found to enhance the quantum efficiency performance in both short and long wavelength regions.
In this work, small random pyramid texturing (0.5-2 μm size) was generated with chemical nano-masking, to enhance the surface passivation of commercial p-type Cz-Si wafers. |
| doi_str_mv | 10.1039/c6ra05321a |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_cross</sourceid><recordid>TN_cdi_proquest_miscellaneous_1825445953</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1825445953</sourcerecordid><originalsourceid>FETCH-LOGICAL-c286t-ed239fbd7364068ad4f3679b912a7a1518c71cf94d851eaaf24c8e07efc60ef63</originalsourceid><addsrcrecordid>eNpNkE1Lw0AQhhdRsNRevAt7FCG6H9lNcizFLygIWs9hupm1q8km7qZi_72JFXUuMzDPPAwvIaecXXImiyujAzAlBYcDMhEs1Ylgujj8Nx-TWYyvbCituNB8Qt5WG6RoLZqetpbGBuqadrsAjatoj5_9Njj_QltP-xH0G_AGK9pBjO4DejcswFejwRmH3uy-LcNJjdQkT47GtoZADdZ1PCFHFuqIs58-Jc8316vFXbJ8uL1fzJeJEbnuE6yELOy6yqROmc6hSq3UWbEuuIAMuOK5ybixRVrliiOAFanJkWVojWZotZyS8723C-37FmNfNi6OH4DHdhtLnguVpqpQckAv9qgJbYwBbdkF10DYlZyVY6jlQj_Ov0OdD_DZHg7R_HJ_ocsvZDB0ZA</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1825445953</pqid></control><display><type>article</type><title>The effect of small pyramid texturing on the enhanced passivation and efficiency of single c-Si solar cells</title><source>Royal Society Of Chemistry Journals 2008-</source><creator>Ju, Minkyu ; Balaji, Nagarajan ; Park, Cheolmin ; Thanh Nguyen, Huong Thi ; Cui, Jian ; Oh, Donghyun ; Jeon, Minhan ; Kang, Jiyoon ; Shim, Gyeongbae ; Yi, Junsin</creator><creatorcontrib>Ju, Minkyu ; Balaji, Nagarajan ; Park, Cheolmin ; Thanh Nguyen, Huong Thi ; Cui, Jian ; Oh, Donghyun ; Jeon, Minhan ; Kang, Jiyoon ; Shim, Gyeongbae ; Yi, Junsin</creatorcontrib><description>In this work, a simple method to form small random pyramid texturing (0.5-2 μm size) is proposed to enhance the surface passivation of commercial p-type Cz-Si wafers. Small pyramid texturing was generated with chemical nano-masking for anisotropic etching. The surface recombination velocity obtained after the passivation of the thermal oxide layer reduced from 65 and 10 cm s
−1
for the large pyramids (10-15 μm size) and small pyramid (0.5-2 μm) texturing respectively. The solar cell fabricated with large pyramid texturing resulted in an efficiency of 17.82% with a current density (
J
SC
) of 36.91 mA cm
−2
, an open circuit voltage (
V
OC
) of 620 mV whereas small pyramid texturing resulted in an efficiency of 18.5% with
J
SC
of 37.6 mA cm
−2
and
V
OC
of 628 mV. The low surface recombination velocity increases the
V
OC
by 8 mV. The small pyramid textured wafers are found to enhance the quantum efficiency performance in both short and long wavelength regions.
In this work, small random pyramid texturing (0.5-2 μm size) was generated with chemical nano-masking, to enhance the surface passivation of commercial p-type Cz-Si wafers.</description><identifier>ISSN: 2046-2069</identifier><identifier>EISSN: 2046-2069</identifier><identifier>DOI: 10.1039/c6ra05321a</identifier><language>eng</language><subject>Oxides ; Passivation ; Photovoltaic cells ; Pyramids ; Solar cells ; Texturing ; Volatile organic compounds ; Wafers</subject><ispartof>RSC advances, 2016-01, Vol.6 (55), p.49831-49838</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c286t-ed239fbd7364068ad4f3679b912a7a1518c71cf94d851eaaf24c8e07efc60ef63</citedby><cites>FETCH-LOGICAL-c286t-ed239fbd7364068ad4f3679b912a7a1518c71cf94d851eaaf24c8e07efc60ef63</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,777,781,27905,27906</link.rule.ids></links><search><creatorcontrib>Ju, Minkyu</creatorcontrib><creatorcontrib>Balaji, Nagarajan</creatorcontrib><creatorcontrib>Park, Cheolmin</creatorcontrib><creatorcontrib>Thanh Nguyen, Huong Thi</creatorcontrib><creatorcontrib>Cui, Jian</creatorcontrib><creatorcontrib>Oh, Donghyun</creatorcontrib><creatorcontrib>Jeon, Minhan</creatorcontrib><creatorcontrib>Kang, Jiyoon</creatorcontrib><creatorcontrib>Shim, Gyeongbae</creatorcontrib><creatorcontrib>Yi, Junsin</creatorcontrib><title>The effect of small pyramid texturing on the enhanced passivation and efficiency of single c-Si solar cells</title><title>RSC advances</title><description>In this work, a simple method to form small random pyramid texturing (0.5-2 μm size) is proposed to enhance the surface passivation of commercial p-type Cz-Si wafers. Small pyramid texturing was generated with chemical nano-masking for anisotropic etching. The surface recombination velocity obtained after the passivation of the thermal oxide layer reduced from 65 and 10 cm s
−1
for the large pyramids (10-15 μm size) and small pyramid (0.5-2 μm) texturing respectively. The solar cell fabricated with large pyramid texturing resulted in an efficiency of 17.82% with a current density (
J
SC
) of 36.91 mA cm
−2
, an open circuit voltage (
V
OC
) of 620 mV whereas small pyramid texturing resulted in an efficiency of 18.5% with
J
SC
of 37.6 mA cm
−2
and
V
OC
of 628 mV. The low surface recombination velocity increases the
V
OC
by 8 mV. The small pyramid textured wafers are found to enhance the quantum efficiency performance in both short and long wavelength regions.
In this work, small random pyramid texturing (0.5-2 μm size) was generated with chemical nano-masking, to enhance the surface passivation of commercial p-type Cz-Si wafers.</description><subject>Oxides</subject><subject>Passivation</subject><subject>Photovoltaic cells</subject><subject>Pyramids</subject><subject>Solar cells</subject><subject>Texturing</subject><subject>Volatile organic compounds</subject><subject>Wafers</subject><issn>2046-2069</issn><issn>2046-2069</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpNkE1Lw0AQhhdRsNRevAt7FCG6H9lNcizFLygIWs9hupm1q8km7qZi_72JFXUuMzDPPAwvIaecXXImiyujAzAlBYcDMhEs1Ylgujj8Nx-TWYyvbCituNB8Qt5WG6RoLZqetpbGBuqadrsAjatoj5_9Njj_QltP-xH0G_AGK9pBjO4DejcswFejwRmH3uy-LcNJjdQkT47GtoZADdZ1PCFHFuqIs58-Jc8316vFXbJ8uL1fzJeJEbnuE6yELOy6yqROmc6hSq3UWbEuuIAMuOK5ybixRVrliiOAFanJkWVojWZotZyS8723C-37FmNfNi6OH4DHdhtLnguVpqpQckAv9qgJbYwBbdkF10DYlZyVY6jlQj_Ov0OdD_DZHg7R_HJ_ocsvZDB0ZA</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Ju, Minkyu</creator><creator>Balaji, Nagarajan</creator><creator>Park, Cheolmin</creator><creator>Thanh Nguyen, Huong Thi</creator><creator>Cui, Jian</creator><creator>Oh, Donghyun</creator><creator>Jeon, Minhan</creator><creator>Kang, Jiyoon</creator><creator>Shim, Gyeongbae</creator><creator>Yi, Junsin</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope></search><sort><creationdate>20160101</creationdate><title>The effect of small pyramid texturing on the enhanced passivation and efficiency of single c-Si solar cells</title><author>Ju, Minkyu ; Balaji, Nagarajan ; Park, Cheolmin ; Thanh Nguyen, Huong Thi ; Cui, Jian ; Oh, Donghyun ; Jeon, Minhan ; Kang, Jiyoon ; Shim, Gyeongbae ; Yi, Junsin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c286t-ed239fbd7364068ad4f3679b912a7a1518c71cf94d851eaaf24c8e07efc60ef63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Oxides</topic><topic>Passivation</topic><topic>Photovoltaic cells</topic><topic>Pyramids</topic><topic>Solar cells</topic><topic>Texturing</topic><topic>Volatile organic compounds</topic><topic>Wafers</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Ju, Minkyu</creatorcontrib><creatorcontrib>Balaji, Nagarajan</creatorcontrib><creatorcontrib>Park, Cheolmin</creatorcontrib><creatorcontrib>Thanh Nguyen, Huong Thi</creatorcontrib><creatorcontrib>Cui, Jian</creatorcontrib><creatorcontrib>Oh, Donghyun</creatorcontrib><creatorcontrib>Jeon, Minhan</creatorcontrib><creatorcontrib>Kang, Jiyoon</creatorcontrib><creatorcontrib>Shim, Gyeongbae</creatorcontrib><creatorcontrib>Yi, Junsin</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><jtitle>RSC advances</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Ju, Minkyu</au><au>Balaji, Nagarajan</au><au>Park, Cheolmin</au><au>Thanh Nguyen, Huong Thi</au><au>Cui, Jian</au><au>Oh, Donghyun</au><au>Jeon, Minhan</au><au>Kang, Jiyoon</au><au>Shim, Gyeongbae</au><au>Yi, Junsin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The effect of small pyramid texturing on the enhanced passivation and efficiency of single c-Si solar cells</atitle><jtitle>RSC advances</jtitle><date>2016-01-01</date><risdate>2016</risdate><volume>6</volume><issue>55</issue><spage>49831</spage><epage>49838</epage><pages>49831-49838</pages><issn>2046-2069</issn><eissn>2046-2069</eissn><abstract>In this work, a simple method to form small random pyramid texturing (0.5-2 μm size) is proposed to enhance the surface passivation of commercial p-type Cz-Si wafers. Small pyramid texturing was generated with chemical nano-masking for anisotropic etching. The surface recombination velocity obtained after the passivation of the thermal oxide layer reduced from 65 and 10 cm s
−1
for the large pyramids (10-15 μm size) and small pyramid (0.5-2 μm) texturing respectively. The solar cell fabricated with large pyramid texturing resulted in an efficiency of 17.82% with a current density (
J
SC
) of 36.91 mA cm
−2
, an open circuit voltage (
V
OC
) of 620 mV whereas small pyramid texturing resulted in an efficiency of 18.5% with
J
SC
of 37.6 mA cm
−2
and
V
OC
of 628 mV. The low surface recombination velocity increases the
V
OC
by 8 mV. The small pyramid textured wafers are found to enhance the quantum efficiency performance in both short and long wavelength regions.
In this work, small random pyramid texturing (0.5-2 μm size) was generated with chemical nano-masking, to enhance the surface passivation of commercial p-type Cz-Si wafers.</abstract><doi>10.1039/c6ra05321a</doi><tpages>8</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 2046-2069 |
| ispartof | RSC advances, 2016-01, Vol.6 (55), p.49831-49838 |
| issn | 2046-2069 2046-2069 |
| language | eng |
| recordid | cdi_proquest_miscellaneous_1825445953 |
| source | Royal Society Of Chemistry Journals 2008- |
| subjects | Oxides Passivation Photovoltaic cells Pyramids Solar cells Texturing Volatile organic compounds Wafers |
| title | The effect of small pyramid texturing on the enhanced passivation and efficiency of single c-Si solar cells |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-20T17%3A41%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20effect%20of%20small%20pyramid%20texturing%20on%20the%20enhanced%20passivation%20and%20efficiency%20of%20single%20c-Si%20solar%20cells&rft.jtitle=RSC%20advances&rft.au=Ju,%20Minkyu&rft.date=2016-01-01&rft.volume=6&rft.issue=55&rft.spage=49831&rft.epage=49838&rft.pages=49831-49838&rft.issn=2046-2069&rft.eissn=2046-2069&rft_id=info:doi/10.1039/c6ra05321a&rft_dat=%3Cproquest_cross%3E1825445953%3C/proquest_cross%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=1825445953&rft_id=info:pmid/&rfr_iscdi=true |