Effect of superlattice on light output power of InGaN-based light-emitting diodes fabricated on underlying GaN substrates with different dislocation densities

We evaluated the electrical properties of InGaN‐based light‐emitting diodes (LEDs) with a surperlattice (SL) layer just below the MQWs for forming V‐shaped pits (V‐pits) on underlying GaN substrates with different dislocation densities (DDs). The SL was effective for improving the EL intensity for a...

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Veröffentlicht in:	Physica status solidi. C 2016-05, Vol.13 (5-6), p.270-273
Hauptverfasser:	Sugimoto, Kohei, Denpo, Yusho, Okada, Narihito, Tadatomo, Kazuyuki
Format:	Artikel
Sprache:	eng
Schlagworte:	Dislocation density Electric power generation Electrical properties Gallium nitrides GaN LED Light-emitting diodes Pits Solid state physics Substrates superlattice V-pits
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Zusammenfassung:	We evaluated the electrical properties of InGaN‐based light‐emitting diodes (LEDs) with a surperlattice (SL) layer just below the MQWs for forming V‐shaped pits (V‐pits) on underlying GaN substrates with different dislocation densities (DDs). The SL was effective for improving the EL intensity for all the LEDs with different DDs. However, the improvement ratio decreased with decreasing DD. The SL is effective for performance improvement of the LEDs with high DDs. (© 2015 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
ISSN:	1862-6351 1610-1642
DOI:	10.1002/pssc.201510203