Iridium–silicide nanowires on Si(110) surface
We studied physical and electronic properties of iridium silicide nanowires grown on the Si(110) surface with the help of scanning tunneling microscopy and spectroscopy. The nanowires grow along the [001] direction with an average length of about 100nm. They have a band gap of ~0.5eV and their elect...
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| Veröffentlicht in: | Surface science 2015-11, Vol.641, p.237-241 |
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| container_title | Surface science |
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| creator | Mohottige, Rasika N. Oncel, Nuri |
| description | We studied physical and electronic properties of iridium silicide nanowires grown on the Si(110) surface with the help of scanning tunneling microscopy and spectroscopy. The nanowires grow along the [001] direction with an average length of about 100nm. They have a band gap of ~0.5eV and their electronic properties show similarities with the iridium silicide ring clusters formed on Ir modified Si(111) surface.
[Display omitted]
•Iridium-silicide nanowires were grown on Si(110) surface.•The average height, length and width of nanowires are 1.76nm, 106.27nm and 14.63nm respectively.•The nanowires have a band gap of about 0.5eV.•Electronic properties of the nanowires resemble iridium ring clusters formed on Si(111) surface. |
| doi_str_mv | 10.1016/j.susc.2015.07.016 |
| format | Article |
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[Display omitted]
•Iridium-silicide nanowires were grown on Si(110) surface.•The average height, length and width of nanowires are 1.76nm, 106.27nm and 14.63nm respectively.•The nanowires have a band gap of about 0.5eV.•Electronic properties of the nanowires resemble iridium ring clusters formed on Si(111) surface.</description><identifier>ISSN: 0039-6028</identifier><identifier>EISSN: 1879-2758</identifier><identifier>DOI: 10.1016/j.susc.2015.07.016</identifier><language>eng</language><publisher>Elsevier B.V</publisher><subject>Analogies ; Clusters ; Electronic properties ; Intermetallics ; Iridium ; Nanowires ; Scanning tunneling microscopy ; Silicides ; Silicon 110 ; STM ; STS</subject><ispartof>Surface science, 2015-11, Vol.641, p.237-241</ispartof><rights>2015 Elsevier B.V.</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c377t-f8d1a7f8e58e773093cf30e74983a27e79cb719b458d77887d205bd88cc019533</citedby><cites>FETCH-LOGICAL-c377t-f8d1a7f8e58e773093cf30e74983a27e79cb719b458d77887d205bd88cc019533</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://www.sciencedirect.com/science/article/pii/S0039602815002083$$EHTML$$P50$$Gelsevier$$H</linktohtml><link.rule.ids>314,776,780,3537,27901,27902,65306</link.rule.ids></links><search><creatorcontrib>Mohottige, Rasika N.</creatorcontrib><creatorcontrib>Oncel, Nuri</creatorcontrib><title>Iridium–silicide nanowires on Si(110) surface</title><title>Surface science</title><description>We studied physical and electronic properties of iridium silicide nanowires grown on the Si(110) surface with the help of scanning tunneling microscopy and spectroscopy. The nanowires grow along the [001] direction with an average length of about 100nm. They have a band gap of ~0.5eV and their electronic properties show similarities with the iridium silicide ring clusters formed on Ir modified Si(111) surface.
[Display omitted]
•Iridium-silicide nanowires were grown on Si(110) surface.•The average height, length and width of nanowires are 1.76nm, 106.27nm and 14.63nm respectively.•The nanowires have a band gap of about 0.5eV.•Electronic properties of the nanowires resemble iridium ring clusters formed on Si(111) surface.</description><subject>Analogies</subject><subject>Clusters</subject><subject>Electronic properties</subject><subject>Intermetallics</subject><subject>Iridium</subject><subject>Nanowires</subject><subject>Scanning tunneling microscopy</subject><subject>Silicides</subject><subject>Silicon 110</subject><subject>STM</subject><subject>STS</subject><issn>0039-6028</issn><issn>1879-2758</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kMFKAzEURYMoWKs_4GqWdTHTl2TSl4AbKVYLBRfqOkyTN5AynalJR3HnP_iHfolT6tq3uXC558G9jF1zKDjw2XRTpD65QgBXBWAxWCdsxDWaXKDSp2wEIE0-A6HP2UVKGxiuNGrEpssYfOi3P1_fKTTBBU9ZW7XdR4iUsq7NnsOEc7jJUh_rytElO6urJtHVn47Z6-L-Zf6Yr54elvO7Ve4k4j6vtecV1pqUJkQJRrpaAmFptKwEEhq3Rm7WpdIeUWv0AtTaa-0ccKOkHLPJ8e8udm89pb3dhuSoaaqWuj5ZroUqSzGTfIiKY9TFLqVItd3FsK3ip-VgD-vYjT2sYw_rWEA7WAN0e4RoKPEeKNrkArWO_FDc7a3vwn_4L-8fbJY</recordid><startdate>20151101</startdate><enddate>20151101</enddate><creator>Mohottige, Rasika N.</creator><creator>Oncel, Nuri</creator><general>Elsevier B.V</general><scope>AAYXX</scope><scope>CITATION</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20151101</creationdate><title>Iridium–silicide nanowires on Si(110) surface</title><author>Mohottige, Rasika N. ; Oncel, Nuri</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c377t-f8d1a7f8e58e773093cf30e74983a27e79cb719b458d77887d205bd88cc019533</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Analogies</topic><topic>Clusters</topic><topic>Electronic properties</topic><topic>Intermetallics</topic><topic>Iridium</topic><topic>Nanowires</topic><topic>Scanning tunneling microscopy</topic><topic>Silicides</topic><topic>Silicon 110</topic><topic>STM</topic><topic>STS</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Mohottige, Rasika N.</creatorcontrib><creatorcontrib>Oncel, Nuri</creatorcontrib><collection>CrossRef</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Surface science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Mohottige, Rasika N.</au><au>Oncel, Nuri</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Iridium–silicide nanowires on Si(110) surface</atitle><jtitle>Surface science</jtitle><date>2015-11-01</date><risdate>2015</risdate><volume>641</volume><spage>237</spage><epage>241</epage><pages>237-241</pages><issn>0039-6028</issn><eissn>1879-2758</eissn><abstract>We studied physical and electronic properties of iridium silicide nanowires grown on the Si(110) surface with the help of scanning tunneling microscopy and spectroscopy. The nanowires grow along the [001] direction with an average length of about 100nm. They have a band gap of ~0.5eV and their electronic properties show similarities with the iridium silicide ring clusters formed on Ir modified Si(111) surface.
[Display omitted]
•Iridium-silicide nanowires were grown on Si(110) surface.•The average height, length and width of nanowires are 1.76nm, 106.27nm and 14.63nm respectively.•The nanowires have a band gap of about 0.5eV.•Electronic properties of the nanowires resemble iridium ring clusters formed on Si(111) surface.</abstract><pub>Elsevier B.V</pub><doi>10.1016/j.susc.2015.07.016</doi><tpages>5</tpages><oa>free_for_read</oa></addata></record> |
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| ispartof | Surface science, 2015-11, Vol.641, p.237-241 |
| issn | 0039-6028 1879-2758 |
| language | eng |
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| source | ScienceDirect Journals (5 years ago - present) |
| subjects | Analogies Clusters Electronic properties Intermetallics Iridium Nanowires Scanning tunneling microscopy Silicides Silicon 110 STM STS |
| title | Iridium–silicide nanowires on Si(110) surface |
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