Iridium–silicide nanowires on Si(110) surface

We studied physical and electronic properties of iridium silicide nanowires grown on the Si(110) surface with the help of scanning tunneling microscopy and spectroscopy. The nanowires grow along the [001] direction with an average length of about 100nm. They have a band gap of ~0.5eV and their electronic properties show similarities with the iridium silicide ring clusters formed on Ir modified Si(111) surface. [Display omitted] •Iridium-silicide nanowires were grown on Si(110) surface.•The average height, length and width of nanowires are 1.76nm, 106.27nm and 14.63nm respectively.•The nanowires have a band gap of about 0.5eV.•Electronic properties of the nanowires resemble iridium ring clusters formed on Si(111) surface.