Multiple effects of Bi doping in enhancing the thermoelectric properties of SnTe
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of s...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2016-01, Vol.4 (34), p.13171-13175 |
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container_title | Journal of materials chemistry. A, Materials for energy and sustainability |
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creator | Zhou, Zhiwei Yang, Junyou Jiang, Qinghui Luo, Yubo Zhang, Dan Ren, Yangyang He, Xu Xin, Jiwu |
description | We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of states effective mass. The lattice thermal conductivity was also greatly reduced as a result of the wide frequency range of phonon scattering by multiscale architectures derived from Bi doping. A maximum
ZT
value of
c
. 1.1 at 873 K was obtained in Sn
0.94
Bi
0.06
Te, an enhancement of 165% compared with the undoped sample.
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. |
doi_str_mv | 10.1039/c6ta04240f |
format | Article |
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ZT
value of
c
. 1.1 at 873 K was obtained in Sn
0.94
Bi
0.06
Te, an enhancement of 165% compared with the undoped sample.
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials.</description><identifier>ISSN: 2050-7488</identifier><identifier>EISSN: 2050-7496</identifier><identifier>DOI: 10.1039/c6ta04240f</identifier><language>eng</language><subject>Density ; Doping ; Frequency ranges ; Lattices ; Modulation ; Scattering ; Thermal conductivity ; Thermoelectricity</subject><ispartof>Journal of materials chemistry. A, Materials for energy and sustainability, 2016-01, Vol.4 (34), p.13171-13175</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c426t-91d499e7502b11624b4ef8a66a81d3e4d6804c692affb4002292bcb7e8f0d63a3</citedby><cites>FETCH-LOGICAL-c426t-91d499e7502b11624b4ef8a66a81d3e4d6804c692affb4002292bcb7e8f0d63a3</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27901,27902</link.rule.ids></links><search><creatorcontrib>Zhou, Zhiwei</creatorcontrib><creatorcontrib>Yang, Junyou</creatorcontrib><creatorcontrib>Jiang, Qinghui</creatorcontrib><creatorcontrib>Luo, Yubo</creatorcontrib><creatorcontrib>Zhang, Dan</creatorcontrib><creatorcontrib>Ren, Yangyang</creatorcontrib><creatorcontrib>He, Xu</creatorcontrib><creatorcontrib>Xin, Jiwu</creatorcontrib><title>Multiple effects of Bi doping in enhancing the thermoelectric properties of SnTe</title><title>Journal of materials chemistry. A, Materials for energy and sustainability</title><description>We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of states effective mass. The lattice thermal conductivity was also greatly reduced as a result of the wide frequency range of phonon scattering by multiscale architectures derived from Bi doping. A maximum
ZT
value of
c
. 1.1 at 873 K was obtained in Sn
0.94
Bi
0.06
Te, an enhancement of 165% compared with the undoped sample.
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials.</description><subject>Density</subject><subject>Doping</subject><subject>Frequency ranges</subject><subject>Lattices</subject><subject>Modulation</subject><subject>Scattering</subject><subject>Thermal conductivity</subject><subject>Thermoelectricity</subject><issn>2050-7488</issn><issn>2050-7496</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNqNkdFLwzAQxoMoOOZefBf6KEL1kmZp8jiHU2Gi4HwuaXpxka6tSfbgf792k_nqwXF38LuP4ztCLincUsjUnRFRA2cc7AkZMZhCmnMlTo-9lOdkEsIX9CEBhFIj8vayraPrakzQWjQxJK1N7l1StZ1rPhPXJNisdWOGIa5xSL9pse5R70zS-bZDHx3u996bFV6QM6vrgJPfOiYfi4fV_Cldvj4-z2fL1HAmYqpoxZXCfAqspFQwXnK0UguhJa0y5JWQwI1QTFtbcgDGFCtNmaO0UIlMZ2NyfdDtT_jeYojFxgWDda0bbLehoDKbCg45zf-BUkW5yPiA3hxQ49sQPNqi826j_U9BoRhMLuZiNdubvOjhqwPsgzlyf0_Ids5Bd8g</recordid><startdate>20160101</startdate><enddate>20160101</enddate><creator>Zhou, Zhiwei</creator><creator>Yang, Junyou</creator><creator>Jiang, Qinghui</creator><creator>Luo, Yubo</creator><creator>Zhang, Dan</creator><creator>Ren, Yangyang</creator><creator>He, Xu</creator><creator>Xin, Jiwu</creator><scope>AAYXX</scope><scope>CITATION</scope><scope>7ST</scope><scope>C1K</scope><scope>SOI</scope><scope>7SP</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope></search><sort><creationdate>20160101</creationdate><title>Multiple effects of Bi doping in enhancing the thermoelectric properties of SnTe</title><author>Zhou, Zhiwei ; Yang, Junyou ; Jiang, Qinghui ; Luo, Yubo ; Zhang, Dan ; Ren, Yangyang ; He, Xu ; Xin, Jiwu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c426t-91d499e7502b11624b4ef8a66a81d3e4d6804c692affb4002292bcb7e8f0d63a3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Density</topic><topic>Doping</topic><topic>Frequency ranges</topic><topic>Lattices</topic><topic>Modulation</topic><topic>Scattering</topic><topic>Thermal conductivity</topic><topic>Thermoelectricity</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Zhiwei</creatorcontrib><creatorcontrib>Yang, Junyou</creatorcontrib><creatorcontrib>Jiang, Qinghui</creatorcontrib><creatorcontrib>Luo, Yubo</creatorcontrib><creatorcontrib>Zhang, Dan</creatorcontrib><creatorcontrib>Ren, Yangyang</creatorcontrib><creatorcontrib>He, Xu</creatorcontrib><creatorcontrib>Xin, Jiwu</creatorcontrib><collection>CrossRef</collection><collection>Environment Abstracts</collection><collection>Environmental Sciences and Pollution Management</collection><collection>Environment Abstracts</collection><collection>Electronics & Communications Abstracts</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Zhiwei</au><au>Yang, Junyou</au><au>Jiang, Qinghui</au><au>Luo, Yubo</au><au>Zhang, Dan</au><au>Ren, Yangyang</au><au>He, Xu</au><au>Xin, Jiwu</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Multiple effects of Bi doping in enhancing the thermoelectric properties of SnTe</atitle><jtitle>Journal of materials chemistry. A, Materials for energy and sustainability</jtitle><date>2016-01-01</date><risdate>2016</risdate><volume>4</volume><issue>34</issue><spage>13171</spage><epage>13175</epage><pages>13171-13175</pages><issn>2050-7488</issn><eissn>2050-7496</eissn><abstract>We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of states effective mass. The lattice thermal conductivity was also greatly reduced as a result of the wide frequency range of phonon scattering by multiscale architectures derived from Bi doping. A maximum
ZT
value of
c
. 1.1 at 873 K was obtained in Sn
0.94
Bi
0.06
Te, an enhancement of 165% compared with the undoped sample.
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials.</abstract><doi>10.1039/c6ta04240f</doi><tpages>5</tpages></addata></record> |
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source | Royal Society Of Chemistry Journals 2008-; Alma/SFX Local Collection |
subjects | Density Doping Frequency ranges Lattices Modulation Scattering Thermal conductivity Thermoelectricity |
title | Multiple effects of Bi doping in enhancing the thermoelectric properties of SnTe |
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