Multiple effects of Bi doping in enhancing the thermoelectric properties of SnTe
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of s...
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Veröffentlicht in: | Journal of materials chemistry. A, Materials for energy and sustainability Materials for energy and sustainability, 2016-01, Vol.4 (34), p.13171-13175 |
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Hauptverfasser: | , , , , , , , |
Format: | Artikel |
Sprache: | eng |
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Zusammenfassung: | We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. Doping with Bi reduced the density of holes and increased the Seebeck coefficient over a wide temperature range as a result of modulation of the carrier concentration and an increase in the density of states effective mass. The lattice thermal conductivity was also greatly reduced as a result of the wide frequency range of phonon scattering by multiscale architectures derived from Bi doping. A maximum
ZT
value of
c
. 1.1 at 873 K was obtained in Sn
0.94
Bi
0.06
Te, an enhancement of 165% compared with the undoped sample.
We studied the effect of doping with Bi on the thermoelectric properties of SnTe-based materials. |
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ISSN: | 2050-7488 2050-7496 |
DOI: | 10.1039/c6ta04240f |