SiAg film by magnetron sputtering for high reversible lithium ion storage anodes

In the present work we proposed a new strategy to produce Si electrodes with high capacity retention. Si film with 20% at. Ag content is deposited by magnetron sputtering. The galvanostatic test result shows that the electrode delivers 1825 mAh g−1 initially with 95% Coulombic efficiency and retains...

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Veröffentlicht in:Journal of alloys and compounds 2016-01, Vol.654, p.363-370
Hauptverfasser: Polat, B.D., Eryilmaz, O.L., Keles, O.
Format: Artikel
Sprache:eng
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Zusammenfassung:In the present work we proposed a new strategy to produce Si electrodes with high capacity retention. Si film with 20% at. Ag content is deposited by magnetron sputtering. The galvanostatic test result shows that the electrode delivers 1825 mAh g−1 initially with 95% Coulombic efficiency and retains 96% of its initial discharge capacity after 60 cycles when cycled between 0.2–1.2 V. The same SiAg electrode performs 2500 mAh g−1 as the first discharge capacity and quickly fails after 20 cycles when cycled between 0.005–1.2 V. Cyclic voltammetry and electrochemical impedance spectroscopy show that by proper selection of lower cut-off voltage (0.2 V), Ag particles remain inactive versus Li in cycling, which induces the distribution of finely dispersed active (Si) element with an inactive component (Ag) in the electrode. The results of the galvanostatic test at different lower cut-off potentials exhibit outstanding properties. The SiAg electrodes are highly dependent on the potential range since high reversibility and good capacity retention are mostly related to the presence of Ag, which decreases the polarization of anode when its reaction with lithium is restricted. [Display omitted] •20% at. Ag containing Si based composite film is deposited by magnetron sputtering.•By adjusting the lower cut off voltage to 0.2 V the lithiation reaction is controlled.•By distributing finely dispersed Si with inactive Ag, the performance is improved.
ISSN:0925-8388
1873-4669
DOI:10.1016/j.jallcom.2015.09.095