Novel microwave plasma-assisted CVD reactor for diamond delta doping

We report on building a novel chemical vapor deposition (CVD) reactor for diamond delta‐doping. The main features of our reactor are: a) the use of rapid gas switching system, (b) the reactor design providing the laminar gas flow. These features provide the creation of ultra‐sharp interfaces between doped and undoped material and minimize the prolonged ”tails” formation in the doping profile. It is proved by optical emission spectroscopy that gas switching time is not more than 10 seconds. Using the novel reactor we have grown the nanometer‐thin layers of boron doped diamond. The FWHM of boron concentration profile is about 2 nm which is proved by SIMS. It is shown that the both single delta‐layer and multiple delta‐layers could be grown using the novel CVD reactor. In principle, the reactor could be used for diamond delta doping with other dopants, like nitrogen, phosphorus etc. (© 2016 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) Delta doping of diamond allows creating both high carrier concentrations with high mobility. This Letter reports on building a novel CVD reactor for diamond delta doping. Using the novel reactor the authors have grown the nanometer‐thin layers of boron doped diamond with ultra‐sharp interfaces between doped/undoped material. The reactor could be also used for diamond delta doping with other dopants, like nitrogen, phosphorus etc.