Theoretical stress calculations in polar, semipolar and nonpolar AlGaN/GaN heterostructures of different compositions

The new comprehensive model of the process for matching epitaxial layers to substrates, in dependence of theirs crystallographic orientation, was developed to allow a theoretical prediction of the strain and stress in thin AlGaN epitaxial layers with different composition grown on GaN template. The elements of the continuous anisotropic materials strength theory was applied to develop the model. It was observed that in AlGaN/GaN heterostructures the stress was greater than the upper limit of acceptable tensile stress even for a small Al content and also that the stress could greatly vary, in a value and a direction, depending on substrate crystallographic orientation and an Al content in AlGaN layer. The obtained results theoretically explained the commonly observed technological problems occurring during the growth of AlGaN layers even with a small Al content. The model of the process for matching epitaxial layers to substrates, in dependence of crystallographic orientation was developed to theoretically predict strain and stress in thin AlGaN epitaxial layers with different composition grown on GaN substrate. The obtained results theoretically explained the observed technological problems occurring during the growth of AlGaN layers even with a small Al content.