300-GHz Amplifier in 75-nm InP HEMT Technology

300-GHz Amplifier in 75-nm InP HEMT Technology

We developed a 300-GHz high gain amplifier MMIC in 75-nm InP high electron mobility transistor technology. We approached the issues with accurate characterization of devices to design the amplifier. The on-wafer through-reflect-line calibration technique was used to obtain accurate transistor charac...

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Veröffentlicht in:IEICE Transactions on Electronics 2016/05/01, Vol.E99.C(5), pp.528-534
Hauptverfasser: MATSUMURA, Hiroshi, KAWANO, Yoichi, SHIBA, Shoichi, SATO, Masaru, SUZUKI, Toshihide, NAKASHA, Yasuhiro, TAKAHASHI, Tsuyoshi, MAKIYAMA, Kozo, IWAI, Taisuke, HARA, Naoki
Format: Artikel
Sprache:eng
Schlagworte:
Amplification
Calibration
Frequency bands
Gain
High electron mobility transistors
High gain
Indium phosphides
InP HEMT
on-wafer TRL calibration
Semiconductor devices
sub millimeter-wave
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Beschreibung
Zusammenfassung:We developed a 300-GHz high gain amplifier MMIC in 75-nm InP high electron mobility transistor technology. We approached the issues with accurate characterization of devices to design the amplifier. The on-wafer through-reflect-line calibration technique was used to obtain accurate transistor characteristics. To increase measurement accuracy, a highly isolated structure was used for on-wafer calibration standards. The common source amplifier topology was used for achieving high gain amplification. The implemented amplifier MMIC exhibited a gain of over 25 dB in the 280-310-GHz frequency band.
ISSN:0916-8524
1745-1353
DOI:10.1587/transele.E99.C.528