Fabrication of graphitic layers in diamond using FIB implantation and high pressure high temperature annealing

We have used high pressure high temperature annealing (HPHT) for graphitisation of implanted layers in diamond created by 30keV Ga+ focused ion beam. Electron microscopy has been used to investigate the implanted layers. It has been revealed that, unlike annealing at vacuum pressure, the graphitization during HPHT annealing occurred through epitaxial growth of graphite (002) planes parallel to (111) diamond planes. High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy. [Display omitted] •High pressure high temperature annealing was used for the structural transformation of implanted layers in diamond.•The annealing resulted in the epitaxial graphitisation of continuous amorphous layer after high fluence Ga implantation.•Graphite (002) planes grew parallel to (111) diamond planes.•High quality of graphite was confirmed by high resolution electron microscopy and electron energy loss spectroscopy.