Physically Transient Resistive Switching Memory Based on Silk Protein
Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate‐buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of m...
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| Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2016-05, Vol.12 (20), p.2715-2719 |
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| container_issue | 20 |
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| container_title | Small (Weinheim an der Bergstrasse, Germany) |
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| creator | Wang, Hong Zhu, Bowen Ma, Xiaohua Hao, Yue Chen, Xiaodong |
| description | Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate‐buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of more than 104 s are achieved for nonvolatile memory applications. |
| doi_str_mv | 10.1002/smll.201502906 |
| format | Article |
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| fulltext | fulltext |
| identifier | ISSN: 1613-6810 |
| ispartof | Small (Weinheim an der Bergstrasse, Germany), 2016-05, Vol.12 (20), p.2715-2719 |
| issn | 1613-6810 1613-6829 |
| language | eng |
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| source | MEDLINE; Wiley Online Library Journals Frontfile Complete |
| subjects | Deionization Devices Electronics - methods Fibroins - chemistry memory Nanotechnology Nanotechnology - methods Proteins resistive switching Saline Silk Silk - chemistry Switching transient electronics |
| title | Physically Transient Resistive Switching Memory Based on Silk Protein |
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