Physically Transient Resistive Switching Memory Based on Silk Protein

Physically Transient Resistive Switching Memory Based on Silk Protein

Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate‐buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of m...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2016-05, Vol.12 (20), p.2715-2719
Hauptverfasser: Wang, Hong, Zhu, Bowen, Ma, Xiaohua, Hao, Yue, Chen, Xiaodong
Format: Artikel
Sprache:eng
Schlagworte:
Deionization
Devices
Electronics - methods
Fibroins - chemistry
memory
Nanotechnology
Nanotechnology - methods
Proteins
resistive switching
Saline
Silk
Silk - chemistry
Switching
transient electronics
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Physically transient resistive switching devices based on silk protein are successfully demonstrated. The devices can be absolutely dissolved in deionized water or in phosphate‐buffered saline in 2 h. At the same time, a reasonable resistance OFF/ON ratio of larger than 102 and a retention time of more than 104 s are achieved for nonvolatile memory applications.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201502906