Influence of oxygen pressure on the structural and electrical properties of CuO thin films prepared by pulsed laser deposition

CuO thin films were deposited on glass substrates by pulsed laser deposition (PLD) and the influence of oxygen (O2) pressure on the structural and electrical properties of the CuO films was studied. X-ray diffraction (XRD) measurements reveal that the films deposited at 3×10−3Pa, 3–5Pa, and 8–12Pa show a single Cu2O phase, mixed Cu2O–CuO phase, and single CuO phase, respectively. The preferential orientation of CuO films varies from (111) to (002) as the O2 pressure increases from 5 to 8Pa. Hall effect measurements and gas-sensing property study demonstrate that CuO films deposited at 3–5Pa show p-type conductivity while those deposited at 8–12Pa show n-type conductivity. The CuO film deposited at 5Pa has the highest carrier concentration of 5.0×1017cm−3 and the lowest resistivity of 9.5×101Ωcm. •CuO thin films were prepared by PLD technique.•n-Type CuO thin films can be obtained at oxygen pressure of 8–12Pa.•CuO thin film deposited at 5Pa has the lowest resistivity of 9.5×101Ωcm.