Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Self-Curable Gate-All-Around MOSFETs Using Electrical Annealing to Repair Degradation Induced From Hot-Carrier Injection

Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of...

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Veröffentlicht in:IEEE transactions on electron devices 2016-03, Vol.63 (3), p.910-915
Hauptverfasser: Park, Jun-Young, Moon, Dong-Il, Seol, Myeong-Lok, Kim, Choong-Ki, Jeon, Chang-Hoon, Bae, Hagyoul, Bang, Tewook, Choi, Yang-Kyu
Format: Artikel
Sprache:eng
Schlagworte:
Annealing
Degradation
Devices
Electric potential
electrical annealing
gate-all-around (GAA)
Gates
Heating
hot-carrier injection (HCI)
Human computer interaction
Joule heat
Logic gates
Maintenance engineering
MOSFET
nanowire
reliability
Repair
Repairing
self-curable
Voltage
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Zusammenfassung:Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are recovered or further enhanced within a short time of 1 ms. Selecting a proper range of repair voltage is very important to maximize the annealing effects and minimize the extra damages caused by excessive high temperature. The repairing voltage is related to the resistance of the poly-Si gate according to the device scaling.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2015.2513744