Low-power functionality of silicon-nanowire-assembled inverters on bendable plastics

In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of -0.2 nW (or -6.6 pW). The low-power inv...

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Veröffentlicht in:Nano research 2016-05, Vol.9 (5), p.1409-1417
Hauptverfasser: Jeon, Youngin, Lee, Myeongwon, Kim, Minsuk, Kim, Yoonjoong, Kim, Sangsig
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Sprache:eng
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Zusammenfassung:In this paper, we demonstrate the low-power functionality of silicon nanowire (SiNW)-assembled inverters on bendable plastics. Our bendable inverters are capable of operating at supply voltages as low as 0.8 V with a switching (or standby) power consumption of -0.2 nW (or -6.6 pW). The low-power inverting operation with a voltage gain of -18 is attributable to the near-ideal characteristics of the component transistors that have selectively thinned SiNW channels and exhibit low, symmetrical threshold voltages of 0.40 and -0.39 V and low subthreshold swing values of 81 and 65 mV/dec. Moreover, mechanical bendability reveals that the inverting operation has good, stable fatigue properties.
ISSN:1998-0124
1998-0000
DOI:10.1007/s12274-016-1036-7