Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure
A unique way of achieving controllable, pressure‐induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leadi...
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| Veröffentlicht in: | Small (Weinheim an der Bergstrasse, Germany) Germany), 2016-08, Vol.12 (30), p.4063-4069 |
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| container_title | Small (Weinheim an der Bergstrasse, Germany) |
| container_volume | 12 |
| creator | Pandey, Tribhuwan Nayak, Avinash P. Liu, Jin Moran, Samuel T. Kim, Joon-Seok Li, Lain-Jong Lin, Jung-Fu Akinwande, Deji Singh, Abhishek K. |
| description | A unique way of achieving controllable, pressure‐induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leading to heavy p‐type doping in graphene. The doping was confirmed by I2D/IG measurements. |
| doi_str_mv | 10.1002/smll.201600808 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_pubme</sourceid><recordid>TN_cdi_proquest_miscellaneous_1809607369</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>1809607369</sourcerecordid><originalsourceid>FETCH-LOGICAL-i3978-8b4f462cc01f5005673211e411bb49a3eb45e178f26e9431e81b8c14f82359e93</originalsourceid><addsrcrecordid>eNpdkTFv2zAQhYmiRZKmWTsWArpkUXJHUhI1Fk5jG5CToHaQkaDkk6NUFl1SQuJ_XxpONXQiefzew909xr4iXCEAv_bbtr3igCmAAvWBnWGKIk4Vzz-Od4RT9tn7FwCBXGYn7JRnggsh4Iz9enDk_eAonnfroaJ1NHk2bkPRypnO1-SiG7truk1k62hhO9uafahNndk9U0fXC7vk0Yx6ctb3bqj64PSFfapN6-ni_Txnj7c_V5NZXNxP55MfRdyIPFOxKmUtU15VgHUCkKShJ0SSiGUpcyOolAlhpmqeUi4FksJSVShrxUWSUy7O2eXRd-fsn4F8r7eNr6htTUd28BoV5ClkIj2g3_9DX-zgutBdoBCSJKxDBurbOzWUW1rrnWu2xu31v20FID8Cr01L-_EfQR-y0Ics9JiFXi6KYnwFbXzUNr6nt1Fr3G8dJs8S_XQ31ZObxUMhlkKD-AsAFook</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>1810553234</pqid></control><display><type>article</type><title>Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure</title><source>Wiley Journals</source><creator>Pandey, Tribhuwan ; Nayak, Avinash P. ; Liu, Jin ; Moran, Samuel T. ; Kim, Joon-Seok ; Li, Lain-Jong ; Lin, Jung-Fu ; Akinwande, Deji ; Singh, Abhishek K.</creator><creatorcontrib>Pandey, Tribhuwan ; Nayak, Avinash P. ; Liu, Jin ; Moran, Samuel T. ; Kim, Joon-Seok ; Li, Lain-Jong ; Lin, Jung-Fu ; Akinwande, Deji ; Singh, Abhishek K.</creatorcontrib><description>A unique way of achieving controllable, pressure‐induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leading to heavy p‐type doping in graphene. The doping was confirmed by I2D/IG measurements.</description><identifier>ISSN: 1613-6810</identifier><identifier>EISSN: 1613-6829</identifier><identifier>DOI: 10.1002/smll.201600808</identifier><identifier>PMID: 27323330</identifier><language>eng</language><publisher>Germany: Blackwell Publishing Ltd</publisher><subject>doping ; graphene ; heterostructures ; hydrostatic pressure ; molybdenum disulfide ; Nanotechnology ; Raman spectra</subject><ispartof>Small (Weinheim an der Bergstrasse, Germany), 2016-08, Vol.12 (30), p.4063-4069</ispartof><rights>2016 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim</rights><rights>2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.</rights><rights>Copyright © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktopdf>$$Uhttps://onlinelibrary.wiley.com/doi/pdf/10.1002%2Fsmll.201600808$$EPDF$$P50$$Gwiley$$H</linktopdf><linktohtml>$$Uhttps://onlinelibrary.wiley.com/doi/full/10.1002%2Fsmll.201600808$$EHTML$$P50$$Gwiley$$H</linktohtml><link.rule.ids>314,780,784,1417,27924,27925,45574,45575</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/27323330$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Pandey, Tribhuwan</creatorcontrib><creatorcontrib>Nayak, Avinash P.</creatorcontrib><creatorcontrib>Liu, Jin</creatorcontrib><creatorcontrib>Moran, Samuel T.</creatorcontrib><creatorcontrib>Kim, Joon-Seok</creatorcontrib><creatorcontrib>Li, Lain-Jong</creatorcontrib><creatorcontrib>Lin, Jung-Fu</creatorcontrib><creatorcontrib>Akinwande, Deji</creatorcontrib><creatorcontrib>Singh, Abhishek K.</creatorcontrib><title>Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure</title><title>Small (Weinheim an der Bergstrasse, Germany)</title><addtitle>Small</addtitle><description>A unique way of achieving controllable, pressure‐induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leading to heavy p‐type doping in graphene. The doping was confirmed by I2D/IG measurements.</description><subject>doping</subject><subject>graphene</subject><subject>heterostructures</subject><subject>hydrostatic pressure</subject><subject>molybdenum disulfide</subject><subject>Nanotechnology</subject><subject>Raman spectra</subject><issn>1613-6810</issn><issn>1613-6829</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNpdkTFv2zAQhYmiRZKmWTsWArpkUXJHUhI1Fk5jG5CToHaQkaDkk6NUFl1SQuJ_XxpONXQiefzew909xr4iXCEAv_bbtr3igCmAAvWBnWGKIk4Vzz-Od4RT9tn7FwCBXGYn7JRnggsh4Iz9enDk_eAonnfroaJ1NHk2bkPRypnO1-SiG7truk1k62hhO9uafahNndk9U0fXC7vk0Yx6ctb3bqj64PSFfapN6-ni_Txnj7c_V5NZXNxP55MfRdyIPFOxKmUtU15VgHUCkKShJ0SSiGUpcyOolAlhpmqeUi4FksJSVShrxUWSUy7O2eXRd-fsn4F8r7eNr6htTUd28BoV5ClkIj2g3_9DX-zgutBdoBCSJKxDBurbOzWUW1rrnWu2xu31v20FID8Cr01L-_EfQR-y0Ics9JiFXi6KYnwFbXzUNr6nt1Fr3G8dJs8S_XQ31ZObxUMhlkKD-AsAFook</recordid><startdate>201608</startdate><enddate>201608</enddate><creator>Pandey, Tribhuwan</creator><creator>Nayak, Avinash P.</creator><creator>Liu, Jin</creator><creator>Moran, Samuel T.</creator><creator>Kim, Joon-Seok</creator><creator>Li, Lain-Jong</creator><creator>Lin, Jung-Fu</creator><creator>Akinwande, Deji</creator><creator>Singh, Abhishek K.</creator><general>Blackwell Publishing Ltd</general><general>Wiley Subscription Services, Inc</general><scope>BSCLL</scope><scope>NPM</scope><scope>7SR</scope><scope>7U5</scope><scope>8BQ</scope><scope>8FD</scope><scope>JG9</scope><scope>L7M</scope><scope>7X8</scope></search><sort><creationdate>201608</creationdate><title>Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure</title><author>Pandey, Tribhuwan ; Nayak, Avinash P. ; Liu, Jin ; Moran, Samuel T. ; Kim, Joon-Seok ; Li, Lain-Jong ; Lin, Jung-Fu ; Akinwande, Deji ; Singh, Abhishek K.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i3978-8b4f462cc01f5005673211e411bb49a3eb45e178f26e9431e81b8c14f82359e93</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>doping</topic><topic>graphene</topic><topic>heterostructures</topic><topic>hydrostatic pressure</topic><topic>molybdenum disulfide</topic><topic>Nanotechnology</topic><topic>Raman spectra</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Pandey, Tribhuwan</creatorcontrib><creatorcontrib>Nayak, Avinash P.</creatorcontrib><creatorcontrib>Liu, Jin</creatorcontrib><creatorcontrib>Moran, Samuel T.</creatorcontrib><creatorcontrib>Kim, Joon-Seok</creatorcontrib><creatorcontrib>Li, Lain-Jong</creatorcontrib><creatorcontrib>Lin, Jung-Fu</creatorcontrib><creatorcontrib>Akinwande, Deji</creatorcontrib><creatorcontrib>Singh, Abhishek K.</creatorcontrib><collection>Istex</collection><collection>PubMed</collection><collection>Engineered Materials Abstracts</collection><collection>Solid State and Superconductivity Abstracts</collection><collection>METADEX</collection><collection>Technology Research Database</collection><collection>Materials Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>MEDLINE - Academic</collection><jtitle>Small (Weinheim an der Bergstrasse, Germany)</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Pandey, Tribhuwan</au><au>Nayak, Avinash P.</au><au>Liu, Jin</au><au>Moran, Samuel T.</au><au>Kim, Joon-Seok</au><au>Li, Lain-Jong</au><au>Lin, Jung-Fu</au><au>Akinwande, Deji</au><au>Singh, Abhishek K.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure</atitle><jtitle>Small (Weinheim an der Bergstrasse, Germany)</jtitle><addtitle>Small</addtitle><date>2016-08</date><risdate>2016</risdate><volume>12</volume><issue>30</issue><spage>4063</spage><epage>4069</epage><pages>4063-4069</pages><issn>1613-6810</issn><eissn>1613-6829</eissn><abstract>A unique way of achieving controllable, pressure‐induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leading to heavy p‐type doping in graphene. The doping was confirmed by I2D/IG measurements.</abstract><cop>Germany</cop><pub>Blackwell Publishing Ltd</pub><pmid>27323330</pmid><doi>10.1002/smll.201600808</doi><tpages>7</tpages></addata></record> |
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| source | Wiley Journals |
| subjects | doping graphene heterostructures hydrostatic pressure molybdenum disulfide Nanotechnology Raman spectra |
| title | Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure |
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