Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure

Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure

A unique way of achieving controllable, pressure‐induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leadi...

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Veröffentlicht in:Small (Weinheim an der Bergstrasse, Germany) Germany), 2016-08, Vol.12 (30), p.4063-4069
Hauptverfasser: Pandey, Tribhuwan, Nayak, Avinash P., Liu, Jin, Moran, Samuel T., Kim, Joon-Seok, Li, Lain-Jong, Lin, Jung-Fu, Akinwande, Deji, Singh, Abhishek K.
Format: Artikel
Sprache:eng
Schlagworte:
doping
graphene
heterostructures
hydrostatic pressure
molybdenum disulfide
Nanotechnology
Raman spectra
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Zusammenfassung:A unique way of achieving controllable, pressure‐induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa−1 as a function of applied hydrostatic pressure, leading to heavy p‐type doping in graphene. The doping was confirmed by I2D/IG measurements.
ISSN:1613-6810
1613-6829
DOI:10.1002/smll.201600808