InGaAsP/InP photodetectors targeting on 1.06μm wavelength detection

•InGaAsP photodetectors targeting on 1.06μm wavelength have been demonstrated.•The dark current is dramatically lower than In0.53Ga0.47As detector.•The detectivity at 1.06μm is much higher comparing to In0.53Ga0.47As detector.•The theoretical mechanisms are analyzed and compared to experimental results. InP-based InGaAsP photodetectors targeting on 1.06μm wavelength detection have been grown by gas source molecular beam epitaxy and demonstrated. For the detector with 200μm mesa diameter, the dark current at 10mV reverse bias and R0A are 8.89pA (2.2×10−8A/cm2) and 3.9×105Ωcm2 at room temperature. The responsivity and detectivity of the InGaAsP detector are 0.30A/W and 1.45×1012cmHz1/2W−1 at 1.06μm wavelength. Comparing to the reference In0.53Ga0.47As detector, the dark current of this InGaAsP detector is about 570 times lower and the detectivity is more than ten times higher, which agrees well with the theoretical estimation.