Germanium-catalyzed growth of single-crystal GaN nanowires

We report the use of Germanium (Ge) as catalyst for Gallium Nitride (GaN) nanowires growth. High-yield growth has been achieved with Ge nanoparticles obtained by dewetting a thin layer of Ge on a Si (100) substrate. The nanowires are long and grow straight with very little curvature. The GaN nanowires are single-crystalline and show a Wurtzite structure growing along the [0001] axis. The growth follows a metal-free Vapor–Liquid–Solid (VLS) mechanism, further allowing a CMOS technology compatibility. The synthesis of nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system. •GaN nanowires have been grown on Silicon substrate using Germanium as catalyst.•The nanowires are single crystalline and show a Wurtzite structure growing along the [0001] axis.•The growth follows a Vapor–Liquid–Solid (VLS) mechanism.•The synthesis of GaN nanowires has been done using an industrial Low Pressure Chemical Vapor Deposition (LPCVD) system.