Lifetime improvement of photovoltaic silicon crystals grown by Czochralski technique using “liquinert” quartz crucibles

We succeeded in growing CZ monocrystalline silicon crystals with a longer lifetime than previously achieved. The MCZ technique was not used; instead, we employed melt-phobic quartz crucibles in a conventional CZ furnace. The improved lifetime is the result of reduced carbon incorporation into the growing crystals due to the suppression of SiO evaporation from the melt in the melt-phobic crucible. The melt-phobic effect of our crucibles has the potential to control the convection of molten silicon. •Quartz crucibles with melt-phobic property were developed.•CZ Si grown with the crucible has lower impurity content than standard CZ Si.•The impact of the crucible on carbon reduction is discussed in detail.•CZ Si grown with the crucible has longer lifetime than standard CZ Si.