Ballistic Transport Exceeding 28 μm in CVD Grown Graphene

Ballistic Transport Exceeding 28 μm in CVD Grown Graphene

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(...

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Veröffentlicht in:Nano letters 2016-02, Vol.16 (2), p.1387-1391
Hauptverfasser: Banszerus, Luca, Schmitz, Michael, Engels, Stephan, Goldsche, Matthias, Watanabe, Kenji, Taniguchi, Takashi, Beschoten, Bernd, Stampfer, Christoph
Format: Artikel
Sprache:eng
Schlagworte:
Bend tests
Charge transport
Chemical vapor deposition
Drying
Encapsulation
Graphene
Mean free path
Transport
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Zusammenfassung:We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm2/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.5b04840