Thermal characterization of epitaxial grown polycrystalline silicon

The thermal conductivity of various epitaxial grown polycrystalline silicon layers was measured by using the 3-ω-method. Heater widths of 20μm, 55μm and 80μm were structured applying standard photolithography. Experimental values are given, depending on layer thickness, ranging from 5μm to 50μm, the impurity concentration, the deposition temperature and recrystallization time. The measured values were used to discuss the cross-plane and in-plane thermal conductivity. •The thermal conductivity of polycrystalline silicon layers was measured.•It's mainly influenced by the layer thickness due to different grain sizes.•The impurity concentration influences the anisotropic thermal conductivity.•The recrystallization time increases the in-plane thermal conductivity.