Structural and optical characteristics of PEDOT/n-Si heterojunction diode

[Display omitted] •High quality PEDOT™ films were prepared by spin coating.•Optical absorption and dispersion parameters of PEDOT™ films were estimated.•High rectification characteristics of PEDOT™/n-Si were recorded.•J–V characteristics of PEDOT™/n-Si supports its applicability for diode applications. In this work, Poly(3,4-ethylenedioxythiophene), Tetra Methacrylate (PEDOT™) film was deposited by spin coating on glass substrates. Surface topography and crystalline properties of PEDOT™ were carried out by scanning electron microscopy and transmission electron microscopy, respectively. Fourier transform infrared spectroscopy was used for investigating vibrational properties.Optical characteristics were investigated using spectrophotometric measurements in the wavelength range 200–2500nm. Absorption characteristic in the UV region shows a well-defined absorption band. The UV–vis absorption spectrum was resolved by molecular orbital and band theories and the optical transition of the films is allowed and direct. Optical dispersion parameters namely oscillator energy,dispersion energy, lattice dielectric constant and high frequency dielectric constant were determined. Temperature dependent current density–voltage (J–V) characteristics was studied to clarify the dominant charge transport in the temperature range 398–373K. Moreover, temperature dependent of barrier height, ideality factor and series resistance were also considered. The presented results offer a new perspective in optoelectronic applications.