Quantum efficiency of InSbBi quantum dot photodetector

An InSb(1-x)Bi(x) quantum dot (QD) photodetector was studied in this work. First, the quantum efficiency (QE) was modeled for this structure where the relations of electron and hole densities and their contribution to current density are derived. The absorption of p-, n- and depletion regions were calculated before specifying their contribution to QE. It is shown that adding Bi to Sb-based QD structures increases their absorption and QE. High Bi content extended the cutoff detection wavelength of these detectors.