Probing Carrier Transport and Structure-Property Relationship of Highly Ordered Organic Semiconductors at the Two-Dimensional Limit

One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has incre...

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Veröffentlicht in:Physical review letters 2016-01, Vol.116 (1), p.016602-016602, Article 016602
Hauptverfasser: Zhang, Yuhan, Qiao, Jingsi, Gao, Si, Hu, Fengrui, He, Daowei, Wu, Bing, Yang, Ziyi, Xu, Bingchen, Li, Yun, Shi, Yi, Ji, Wei, Wang, Peng, Wang, Xiaoyong, Xiao, Min, Xu, Hangxun, Xu, Jian-Bin, Wang, Xinran
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Sprache:eng
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Zusammenfassung:One of the basic assumptions in organic field-effect transistors, the most fundamental device unit in organic electronics, is that charge transport occurs two dimensionally in the first few molecular layers near the dielectric interface. Although the mobility of bulk organic semiconductors has increased dramatically, direct probing of intrinsic charge transport in the two-dimensional limit has not been possible due to excessive disorders and traps in ultrathin organic thin films. Here, highly ordered single-crystalline mono- to tetralayer pentacene crystals are realized by van der Waals (vdW) epitaxy on hexagonal BN. We find that the charge transport is dominated by hopping in the first conductive layer, but transforms to bandlike in subsequent layers. Such an abrupt phase transition is attributed to strong modulation of the molecular packing by interfacial vdW interactions, as corroborated by quantitative structural characterization and density functional theory calculations. The structural modulation becomes negligible beyond the second conductive layer, leading to a mobility saturation thickness of only ∼3  nm. Highly ordered organic ultrathin films provide a platform for new physics and device structures (such as heterostructures and quantum wells) that are not possible in conventional bulk crystals.
ISSN:0031-9007
1079-7114
DOI:10.1103/physrevlett.116.016602