Epitaxial growth and photoluminescence excitation spectroscopy of CdSe quantum dots in (Zn,Cd)Se barrier

Epitaxial growth and photoluminescence excitation spectroscopy of CdSe quantum dots in (Zn,Cd)Se barrier

Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87eV, that is below the energy of Mn2+ ions internal transition (2.1eV). This opens a pers...

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Veröffentlicht in:Journal of luminescence 2016-05, Vol.173, p.94-98
Hauptverfasser: Piwowar, J., Pacuski, W., Smoleński, T., Goryca, M., Bogucki, A., Golnik, A., Nawrocki, M., Kossacki, P., Suffczyński, J.
Format: Artikel
Sprache:eng
Schlagworte:
Auger recombination
Barriers
Cadmium selenides
CdSe
Epitaxial growth
Excitation
Exciton
Intermetallics
Photoluminescence
Photoluminescence excitation
Quantum dot
Quantum dots
Spectroscopy
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Beschreibung
Zusammenfassung:Design, epitaxial growth, and resonant spectroscopy of CdSe Quantum Dots (QDs) embedded in an innovative (Zn,Cd)Se barrier are presented. The (Zn,Cd)Se barrier enables shifting of QDs energy emission down to 1.87eV, that is below the energy of Mn2+ ions internal transition (2.1eV). This opens a perspective for implementation of epitaxial CdSe QDs doped with several Mn ions as, e.g., the light sources in high quantum yield magnetooptical devices. Polarization resolved Photoluminescence Excitation measurements of individual QDs reveal sharp (Γ
ISSN:0022-2313
1872-7883
DOI:10.1016/j.jlumin.2015.12.046