150 A SiC V-groove trench gate MOSFET with 6 x 6 mm super(2) chip size on a 150 mm C-face in-house epitaxial wafer

We report the successful demonstration of large current and high-speed switching properties of SiC V-groove trench gate MOSFETs (VMOSFETs). A drain current of 150 A (at super(V) sub(DS)= 2 V and V sub(GS)= 18 V) and breakdown voltage of 960 V were achieved from a packaged 6 x 6 mm super(2) single chip. Moreover, short switching times of t sub(r)= 81 ns and t sub(f)= 32 ns were also obtained. To fabricate such VMOSFETs with high yield, highly uniform in-house epitaxial growth technology on a 150-mm-diameter wafer is also one of the keys, owing to its characteristic dependence on drift layer carrier concentration.