Simulation of a high-efficiency silicon-based heterojunction solar cell

The basic parameters of a-Si：H/c-Si heterojunction solar cells, such as layer thickness, doping concen- tration, a-Si：H/c-Si interface defect density, and the work functions of the transparent conducting oxide （TCO） and back surface field （BSF） layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si：H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si：H/i-a-Si：H/p-c-Si/p＋-a-Si：H/Ag solar cell, a photoelectric conversion efficiency of 27.07% （Voc： 749 mV, Jsc： 42.86 mA/cm2, FF： 84.33%） was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si：H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer （HIT） solar cell manufacturing.