Investigation of photoluminescence dynamics in InGaN/GaN multiple quantum wells

This paper reports the transient photoluminescence properties of a typical InGaN/GaN multiple quantum well light emitting diode structure. Two decay processes were found to contribute to the photoluminescence dynamics. Based on the exciton localization model, key factors, transient lifetimes of radiative/nonradiative recombination, were obtained respectively for two decay processes by numerically fitting and separating the mixed photoluminescence efficiencies and photoluminescence decay data, which provide guidance to trace the origins of exciton localization. The origins of slow PL process and fast PL process were reasonably assigned to local compositional fluctuations of indium and thickness variation of InGaN layers, respectively. •Two PL decays of InGaN/GaN MQWs were separated directly from mixed PL decay curves;•The fitting model satisfied both temperature-varying SSPL and TRPL results.•Two decay processes were assigned to different exciton localization effects.