Electronic Properties of GaAs/AlAs Nanostructure Superlattice for Near Infrared Devices at Low Temperatures

We report here the electronic band structures of symmetric type I GaAs ( d 1 = 2.83 nm)/AlAs ( d 2 = 2.83 nm) superlattice as a function of the well thickness d 1 and the effect of the valence band offset Λ , the ratio d 2 / d 1 , and the temperature on the band gap energy, performed in the envelop function formalism. These results are compared and discussed with the experimental measurements reported in the literature.