Photothermoelectric Effects in Nanoporous Silicon

Photothermoelectric Effects in Nanoporous Silicon

The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light‐induced local heating from illumination at the Au‐electrode/NPSi interface.

Gespeichert in:
Bibliographische Detailangaben
Veröffentlicht in:Advanced materials (Weinheim) 2016-04, Vol.28 (13), p.2644-2648
Hauptverfasser: Lai, Yu-Sheng, Tsai, Chao-Yang, Chang, Chin-Kai, Huang, Cheng-Yin, Hsiao, Vincent K. S., Su, Yuhlong Oliver
Format: Artikel
Sprache:eng
Schlagworte:
Devices
Heating
Illumination
Light
nanoporous silicon
Nanostructure
Photocurrent
Photoelectric effect
Photoelectric emission
photothermoelectric effects
Silicon
thermoelectric effects
Online-Zugang:Volltext
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The first observation of the photothermoelectric effect in a nanoporous silicon (NPSi) device indicates that the photocurrent is dependent on the position of light‐induced local heating from illumination at the Au‐electrode/NPSi interface.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201504990