Injection-locked semiconductor laser-based frequency comb for modulation applications in RF analog photonics
A linearized intensity modulator for periodic and pulsed light is proposed and demonstrated. The free carrier plasma effect has been used to modulate the refractive index of the phase section of a three-section mode-locked laser. If injection locked, the modulation induces an arcsine phase response...
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Veröffentlicht in: | Optics letters 2016-07, Vol.41 (13), p.2990-2993 |
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Hauptverfasser: | , |
Format: | Artikel |
Sprache: | eng |
Online-Zugang: | Volltext |
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Zusammenfassung: | A linearized intensity modulator for periodic and pulsed light is proposed and demonstrated. The free carrier plasma effect has been used to modulate the refractive index of the phase section of a three-section mode-locked laser. If injection locked, the modulation induces an arcsine phase response on the three-section mode-locked laser. By introducing this mode-locked laser into a Mach-Zehnder interferometer biased at quadrature, one can realize a true linear intensity modulation. This novel laser suppresses any unwanted amplitude modulation and increases the performance of the linearized intensity modulator. Experimental results have provided a record low static I
of 0.39 mA and a spur-free dynamic range of 75 dB.Hz
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ISSN: | 0146-9592 1539-4794 |
DOI: | 10.1364/OL.41.002990 |