Growth, Structural and High Pressure Study of GeS sub(0.25) Se sub(0.75) and GeS sub(0.75) Se sub(0.25) Single Crystals

The orthorhombic semi-conducting compound GeS0.25Se0.75 and GeS0.75Se0.25 possess interesting electrical properties and can been the subject of numerous investigations. The changes in solids under high pressure can reveal several new features of inter-atomic forces, which are responsible for their diverse physical properties. Authors have carried out growth of GeS0.25Se0.75 and GeS0.75Se0.25 crystals by Direct Vapor Transport (DVT) technique. For compositional confirmation energy dispersive analysis of X-ray (EDAX) has been used. EDAX results show that the grown crystals are nearly stoichiometrycally perfect. The grown crystals have been characterized by X-ray diffraction technique for structural characterization. The results of variation of electrical resistance do not show presence of any phase transition up to 7 GPa. We investigate in GeS0.25Se0.75 and GeS0.75Se0.25 single crystals that as sulfur content increases, resistance of this compound increases.