Fully transparent nonvolatile resistive polymer memory

We present a fully transparent nonvolatile resistive polymer memory device based on an anthracene‐containing partially aliphatic polyimide along with indium tin oxide (ITO) top and bottom electrodes. High transmittance of over 90% in the wavelength range of 400 to 800 nm is accomplished with an ITO/polyimide/ITO/glass device. The device shows unipolar write‐once‐read‐many times (WORM) memory behavior with an ON/OFF current ratio of ∼2 × 10³, and the ratio remained without any significant degradation for over 10⁴ s. The memory behavior of the device is considered to be governed by trap‐controlled space‐charge limited conduction (SCLC) and local filament formation. Based on molecular simulation of the polyimide, the location of energy states is different from that in the conventional charge transfer (CT) mechanism. Despite the relatively low ON/OFF current ratio, our results can give insight into the development of fully transparent memory device. © 2015 Wiley Periodicals, Inc. J. Polym. Sci., Part A: Polym. Chem. 2016, 54, 918–925