Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor
We propose a dynamic threshold voltage j unctionless tunnel FET （DT-JLTFET） in wnlcn me mresnolu voltage can be dynamically adjusted, resulting in higher ON-current. Through 2D numerical simulations, it is presented that the threshold voltage in the DT-JLTFET can be adjusted by applying a voltage to...
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| Veröffentlicht in: | Journal of semiconductors 2014-11, Vol.35 (11), p.32-39 |
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| container_end_page | 39 |
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| container_issue | 11 |
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| container_title | Journal of semiconductors |
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| creator | Basak, Shibir Asthana, Pranav Kumar Goswami, Yogesh Ghosh, Bahniman |
| description | We propose a dynamic threshold voltage j unctionless tunnel FET （DT-JLTFET） in wnlcn me mresnolu voltage can be dynamically adjusted, resulting in higher ON-current. Through 2D numerical simulations, it is presented that the threshold voltage in the DT-JLTFET can be adjusted by applying a voltage to the adjust gate. The impact of the threshold voltage shift on the overall performance of the device is also studied. A comparison is made between the dynamic threshold voltage characteristics of a silicon JLTFET and a Sio.7Geo.3 source JLTFET. |
| doi_str_mv | 10.1088/1674-4926/35/11/114001 |
| format | Article |
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| ispartof | Journal of semiconductors, 2014-11, Vol.35 (11), p.32-39 |
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| language | eng |
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| source | IOP Publishing Journals; Alma/SFX Local Collection |
| subjects | Adjustment Dynamics Field effect transistors Semiconductor devices Semiconductors SiGe Silicon Silicon germanides Threshold voltage 动态调整 场效应晶体管 操作 硅 门限电压 阈值电压 隧道 |
| title | Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor |
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