Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor

Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor

We propose a dynamic threshold voltage j unctionless tunnel FET （DT-JLTFET） in wnlcn me mresnolu voltage can be dynamically adjusted, resulting in higher ON-current. Through 2D numerical simulations, it is presented that the threshold voltage in the DT-JLTFET can be adjusted by applying a voltage to...

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Veröffentlicht in:Journal of semiconductors 2014-11, Vol.35 (11), p.32-39
Hauptverfasser: Basak, Shibir, Asthana, Pranav Kumar, Goswami, Yogesh, Ghosh, Bahniman
Format: Artikel
Sprache:eng
Schlagworte:
Adjustment
Dynamics
Field effect transistors
Semiconductor devices
Semiconductors
SiGe
Silicon
Silicon germanides
Threshold voltage
动态调整
场效应晶体管
操作
硅
门限电压
阈值电压
隧道
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Beschreibung
Zusammenfassung:We propose a dynamic threshold voltage j unctionless tunnel FET （DT-JLTFET） in wnlcn me mresnolu voltage can be dynamically adjusted, resulting in higher ON-current. Through 2D numerical simulations, it is presented that the threshold voltage in the DT-JLTFET can be adjusted by applying a voltage to the adjust gate. The impact of the threshold voltage shift on the overall performance of the device is also studied. A comparison is made between the dynamic threshold voltage characteristics of a silicon JLTFET and a Sio.7Geo.3 source JLTFET.
ISSN:1674-4926
DOI:10.1088/1674-4926/35/11/114001