Tunable Graphene–GaSe Dual Heterojunction Device

Tunable Graphene–GaSe Dual Heterojunction Device

A field‐effect device based on dual graphene–GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theore...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-03, Vol.28 (9), p.1845-1852
Hauptverfasser: Kim, Wonjae, Li, Changfeng, Chaves, Ferney A., Jiménez, David, Rodriguez, Raul D., Susoma, Jannatul, Fenner, Matthias A., Lipsanen, Harri, Riikonen, Juha
Format: Artikel
Sprache:eng
Schlagworte:
Channels
Devices
Diodes
Electrodes
GaSe
Graphene
Heterojunction devices
Heterojunctions
Rectification
Schottky
two‐dimensional materials
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Beschreibung
Zusammenfassung:A field‐effect device based on dual graphene–GaSe heterojunctions is demonstrated. Monolayer graphene is used as electrodes on a GaSe channel to form two opposing Schottky diodes controllable by local top gates. The device exhibits strong rectification with tunable threshold voltage. Detailed theoretical modeling is used to explain the device operation and to distinguish the differences compared to a single diode.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201504514