Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Site Selective Doping of Ultrathin Metal Dichalcogenides by Laser-Assisted Reaction

Laser‐assisted phosphorus doping is demonstrated on ultrathin transition‐metal dichalcogenides (TMDCs) including n‐type MoS2 and p‐type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivit...

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Veröffentlicht in:Advanced materials (Weinheim) 2016-01, Vol.28 (2), p.341-346
Hauptverfasser: Kim, Eunpa, Ko, Changhyun, Kim, Kyunghoon, Chen, Yabin, Suh, Joonki, Ryu, Sang-Gil, Wu, Kedi, Meng, Xiuqing, Suslu, Aslihan, Tongay, Sefaattin, Wu, Junqiao, Grigoropoulos, Costas P.
Format: Artikel
Sprache:eng
Schlagworte:
2D materials
Customizing
Doping
field-effect transistors
laser-assisted doping
Lasers
Materials selection
Molybdenum disulfide
Nanostructure
Phosphorus
site selective
Stability
transition metal dichalcogenide
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Zusammenfassung:Laser‐assisted phosphorus doping is demonstrated on ultrathin transition‐metal dichalcogenides (TMDCs) including n‐type MoS2 and p‐type WSe2. Temporal and spatial control of the doping is achieved by varying the laser irradiation power and time, demonstrating wide tunability and high site selectivity with high stability. The laser‐assisted doping method may enable a new avenue for functionalizing TMDCs for customized nanodevice applications.
ISSN:0935-9648
1521-4095
DOI:10.1002/adma.201503945