Variations of the parameters of PbSe nanolayers with change of their technology

For designing IR photodetectors based on strained PbSe layers, the optimization of the technology of molecular epitaxy with a "hot-wall" has been performed with the aim of fabrication of the layers with combining high values of residual deformation and thickness. By investigating the characteristics of layers such as the thickness, tangential lattice constant, deformation and x-ray diffraction line halfwidth, the best conditions for growing the layers of optimal thickness of 50-80nm and the highest deformation 1·10−2 were obtained. The width of the forbidden gap in the obtained layers increased by 0.15eV at T=300K as compared with unstrained PbSe layers.