Numerical Analysis for the Growth of Epitaxy Layer in a Large-Size MOCVD Reactor

A modified large-size MOCVD reactor is developed to produce uniform and large-volume epitaxy thin film layer of gallium nitride (GaN). The full governing equations for continuity, momentum, energy and chemical species are solved numerically. It is investigated how thermal flow field, and the operating parameters affect molar concentration of each reactant, and the thin film uniformity. These parameters are involved such as the chamber pressure (100-700 torr), susceptor rotation rate (100-800). In this paper, the simulation results from these listed parameters shows that an optimum epitaxy layer can be achieved in the large-size reactor.